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| 30 V, N-Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm mCoolt Package Features NTLUF4189NZ Power MOSFET and Schottky Diode * * * * * * Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN 1.6x1.6 mm for Board Space Saving Low VF Schottky Diode ESD Protected Gate This is a Halide-Free Device This is a Pb-Free Device http://onsemi.com MOSFET V(BR)DSS 30 V RDS(on) MAX 200 mW @ 4.5 V 250 mW @ 3.0 V 350 mW @ 2.5 V ID MAX 1.5 A 0.5 A 0.5 A Applications * DC-DC Boost Converter * Color Display and Camera Flash Regulators * Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2) Steady State TA = 25C TA = 85C TA = 25C TA = 25C TA = 25C TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG TJ, TSTG IS TL ESD ID PD Symbol VDSS VGS ID Value 30 8.0 1.5 1.1 1.9 0.8 1.3 1.2 0.9 0.5 8.0 -55 to 150 -55 to 125 1.5 260 1000 W A C C A C A W SCHOTTKY DIODE VR MAX 30 V D VF TYP 0.52 V A IF MAX 0.5 A MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Units V V A G S N-Channel MOSFET K Schottky Diode MARKING DIAGRAM 6 1 UDFN6 CASE 517AT mCOOLt 1 AA MG G Power Dissipation (Note 2) Pulsed Drain Current MOSFET Operating Junction and Storage Temperature Schottky Operating Junction & Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Gate-to-Source ESD Rating (HBM) per JESD22-A114F AA = Specific Device Code M = Date Code G = Pb-Free Package PIN CONNECTIONS A N/C 1 2 D D 3 (Top View) 4 S K 6 5 K G V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. (c) Semiconductor Components Industries, LLC, 2009 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. March, 2009 - Rev. 1 1 Publication Order Number: NTLUF4189NZ/D NTLUF4189NZ DEVICE ORDERING INFORMATION Device NTLUF4189NZTAG NTLUF4189NZTBG Package UDFN6 (Pb-Free) UDFN6 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Schottky Diode Maximum Ratings (TJ = 25C unless otherwise stated) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Thermal Resistance Ratings Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t 5 s (Note 3) Junction-to-Ambient - Steady State min Pad (Note 4) Symbol RJA RJA RJA Max 155 100 245 Units C/W Symbol VRRM VR IF Value 30 30 0.5 Units V V A MOSFET Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 1.5 A VGS = 3.0 V, ID = 0.5 A VGS = 2.5 V, ID = 0.5 A Forward Transconductance CHARGES & CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge 3. 4. 5. 6. CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 15 V; ID = 1.5 A VGS = 0 V, f = 1 MHz, VDS = 15 V 95 15 10 1.4 0.2 0.4 0.4 3.0 nC pF gFS VDS = 4.0 V, ID = 0.15 A VGS = 0 V, ID = 250 A ID = 250 A, ref to 25C VGS = 0 V, VDS = 24 V TJ = 25C TJ = 85C 30 22 1.0 10 10 mA V mV/C mA Symbol Test Condition Min Typ Max Units Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 8.0 V VGS = VDS, ID = 250 mA 0.4 1.1 3.0 145 185 220 1.1 1.5 V mV/C 200 250 350 mW S Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. Pulse Test: pulse width 300 ms, duty cycle 2% Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTLUF4189NZ MOSFET Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR Symbol VF Test Condition IF = 10 mA IF = 100 mA IF = 500 mA Maximum Instantaneous Reverse Current IR VR = 10 V VR = 30 V VF IF = 10 mA IF = 100 mA IF = 500 mA Maximum Instantaneous Reverse Current IR VR = 10 V VR = 30 V VF IF = 10 mA IF = 100 mA IF = 500 mA Maximum Instantaneous Reverse Current IR VR = 10 V VR = 30 V C VR = 5 V, f = 1.0 MHz Min VGS = 0 V, dISD/dt = 100 A/ms, IS = 1 A VGS = 0 V, IS = 1A TJ = 25C TJ = 85C 0.8 0.75 10.5 8.9 1.6 2.1 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 15 V, ID = 1A, RG = 6 W 7.0 4.5 10.2 1.2 ns Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Maximum Instantaneous Forward Voltage Typ 0.27 0.36 0.52 2.0 20 Max 0.37 0.46 0.62 10 200 mA Units V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85C unless otherwise specified) Maximum Instantaneous Forward Voltage 0.2 0.3 0.51 80 525 mA V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125C unless otherwise specified) Maximum Instantaneous Forward Voltage 0.14 0.27 0.51 600 3000 mA V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Capacitance 3. 4. 5. 6. 6.0 pF Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. Pulse Test: pulse width 300 ms, duty cycle 2% Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 NTLUF4189NZ TYPICAL MOSFET CHARACTERISTICS 10 8 6 4 2 0 TJ = 25C VGS = 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V 2.0 V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 5 4 3 2 1 TJ = 125C 0 0.5 1 1.5 VDS = 4 V ID, DRAIN CURRENT (A) TJ = 25C TJ = -55C 2 2.5 3 3.5 4 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.35 TJ = 25C 0.30 0.25 0.20 0.15 0.10 1.5 ID = 1.5 A ID = 0.5 A 0.35 0.30 2.0 V 2.5 V 3.0 V 3.5 V 4.0 V 0.25 0.20 0.15 0.10 VGS = 4.5 V TJ = 25C 0 1 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (A) 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Resistance vs. Gate Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VGS = 4.5 V ID = 1.5 A 1000 VGS = 0 V TJ = 150C IDSS, LEAKAGE (nA) 100 TJ = 125C 10 TJ = 85C -25 0 25 50 75 100 125 150 1 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTLUF4189NZ TYPICAL MOSFET CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 150 125 C, CAPACITANCE (pF) 100 75 50 25 0 Crss 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss VGS = 0 V TJ = 25C f = 1 MHz 5 4 VDS 3 QGS 2 1 0 VGS = 15 V ID = 1.5 A TJ = 25C 0 0.25 0.5 0.75 1 1.25 5 QGD VGS 10 QT 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Ciss 15 0 1.5 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 10 IS, SOURCE CURRENT (A) 100 VGS = 4.5 V VDD = 15 V ID = 1.0 A t, TIME (ns) 10 td(off) td(on) tr 1.0 TJ = 150C TJ = 125C TJ = 25C 1 tf 0.1 1 10 RG, GATE RESISTANCE (W) 100 TJ = -55C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1.4 1.3 1.2 POWER (W) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 ID = 250 mA 175 150 125 100 75 50 25 Figure 10. Diode Forward Voltage vs. Current VGS, GATE-TO-SOURCE VOLTAGE (V) 0 150 0.0000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 TJ, TEMPERATURE (C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 5 NTLUF4189NZ TYPICAL MOSFET CHARACTERISTICS 10 ID, DRAIN CURRENT (AMPS) 1 10 ms 100 ms VGS = 8 V 0.1 SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 ms 10 ms dc 0.01 1 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 13. Maximum Rated Forward Biased Safe Operating Area 175 150 125 R(t) (C/W) 100 75 50 0.5 0.02 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) 0.2 25 0.1 0.05 0 0.000001 Figure 14. FET Thermal Response http://onsemi.com 6 NTLUF4189NZ TYPICAL SCHOTTKY CHARACTERISTICS 20 C, TOTAL CAPACITANCE (pF) 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 TA = 25C VR, REVERSE VOLTAGE (V) Figure 15. Total Capacitance IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 IR, REVERSE CURRENT (mA) 10000 1000 100 10 1 0.1 TJ = 125C TJ = 85C 100 TJ = 125C 10 TJ = 85C TJ = 25C 1 TJ = 25C TJ = -55C 0 100 200 300 400 500 600 700 800 0.1 0 5 10 15 20 25 20 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) VR, REVERSE VOLTAGE (V) Figure 16. Typical Forward Voltage Figure 17. Typical Reverse Current http://onsemi.com 7 NTLUF4189NZ PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AT-01 ISSUE O D 2X A B L1 E DETAIL A 0.10 C PIN ONE REFERENCE 2X L OPTIONAL CONSTRUCTION NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D E e D1 D2 E1 K L L1 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 1.14 1.34 0.38 0.58 0.54 0.74 0.20 --- 0.15 0.35 --- 0.10 0.10 C TOP VIEW DETAIL B (A3) A A1 0.05 C 6X 0.05 C SIDE VIEW D1 1 3 A1 2X C SEATING PLANE DETAIL A 6X K D2 E1 L 6 4 6X 6X b 0.10 C A B 0.05 C NOTE 3 e BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 EEE EEE EEE EE EE EXPOSED Cu MOLD CMPD A3 DETAIL B OPTIONAL CONSTRUCTION SOLDERMASK DEFINED MOUNTING FOOTPRINT* 1.34 0.58 2X 0.48 6X 0.74 1.90 1 0.50 PITCH 6X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTLUF4189NZ/D |
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